Determination of the mean inner potential in III-V semiconductors by electron holography.
Identifieur interne : 003358 ( Main/Exploration ); précédent : 003357; suivant : 003359Determination of the mean inner potential in III-V semiconductors by electron holography.
Auteurs : RBID : pubmed:12623168English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Arsenicals, Gallium, Indium, Phosphines.
- instrumentation : Holography, Microscopy, Electron.
- Algorithms, Neutron Diffraction, Semiconductors.
Abstract
The mean inner potential of GaAs(14.18V), InAs(14.50V), GaP(14.35V) and InP(14.50V) has been measured by transmission electron holography using the phase shift of the (000)-beam of the first hologram sideband. To provide a defined specimen geometry we used 90 degrees wedges obtained by the cleavage technique. The exact excitation condition as well as the acceleration voltage of the electrons were determined from convergent beam electron diffraction images. The magnification is extracted from two-beam lattice fringe images and dynamical effects are taken into account by Bloch-wave calculations.
DOI: 10.1016/S0304-3991(02)00376-5
PubMed: 12623168
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To provide a defined specimen geometry we used 90 degrees wedges obtained by the cleavage technique. The exact excitation condition as well as the acceleration voltage of the electrons were determined from convergent beam electron diffraction images. The magnification is extracted from two-beam lattice fringe images and dynamical effects are taken into account by Bloch-wave calculations.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">12623168</PMID><DateCreated><Year>2003</Year><Month>03</Month><Day>07</Day></DateCreated><DateCompleted><Year>2003</Year><Month>06</Month><Day>02</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Print">0304-3991</ISSN><JournalIssue CitedMedium="Print"><Volume>96</Volume><Issue>1</Issue><PubDate><Year>2003</Year><Month>Jul</Month></PubDate></JournalIssue><Title>Ultramicroscopy</Title><ISOAbbreviation>Ultramicroscopy</ISOAbbreviation></Journal><ArticleTitle>Determination of the mean inner potential in III-V semiconductors by electron holography.</ArticleTitle><Pagination><MedlinePgn>11-6</MedlinePgn></Pagination><Abstract><AbstractText>The mean inner potential of GaAs(14.18V), InAs(14.50V), GaP(14.35V) and InP(14.50V) has been measured by transmission electron holography using the phase shift of the (000)-beam of the first hologram sideband. To provide a defined specimen geometry we used 90 degrees wedges obtained by the cleavage technique. The exact excitation condition as well as the acceleration voltage of the electrons were determined from convergent beam electron diffraction images. The magnification is extracted from two-beam lattice fringe images and dynamical effects are taken into account by Bloch-wave calculations.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Kruse</LastName><ForeName>P</ForeName><Initials>P</Initials><Affiliation>Laboratorium für Elektronenmikroskopie, Universität Karlsruhe, Kaiserstr. 12, D-76128 Karlsruhe, Germany. kruse@lem.uni-karlsruhe.de</Affiliation></Author><Author ValidYN="Y"><LastName>Rosenauer</LastName><ForeName>A</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Gerthsen</LastName><ForeName>D</ForeName><Initials>D</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>Netherlands</Country><MedlineTA>Ultramicroscopy</MedlineTA><NlmUniqueID>7513702</NlmUniqueID><ISSNLinking>0304-3991</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Arsenicals</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Phosphines</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-00-0</RegistryNumber><NameOfSubstance>gallium arsenide</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-11-3</RegistryNumber><NameOfSubstance>indium arsenide</NameOfSubstance></Chemical><Chemical><RegistryNumber>22398-80-7</RegistryNumber><NameOfSubstance>indium phosphide</NameOfSubstance></Chemical><Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber><NameOfSubstance>Gallium</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Algorithms</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Arsenicals</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Holography</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Microscopy, Electron</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Neutron Diffraction</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Phosphines</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Semiconductors</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="pubmed"><Year>2003</Year><Month>3</Month><Day>8</Day><Hour>4</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2003</Year><Month>6</Month><Day>5</Day><Hour>5</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2003</Year><Month>3</Month><Day>8</Day><Hour>4</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">12623168</ArticleId><ArticleId IdType="pii">S0304-3991(02)00376-5</ArticleId><ArticleId IdType="doi">10.1016/S0304-3991(02)00376-5</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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